The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Jan. 26, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chen-Hua Yu, Hsin-Chu, TW;

Chien-Yu Li, Hsin-Chu, TW;

Hung-Jui Kuo, Hsin-Chu, TW;

Li-Hsien Huang, Puzi, TW;

Hsien-Wei Chen, Hsin-Chu, TW;

Der-Chyang Yeh, Hsin-Chu, TW;

Chung-Shi Liu, Hsin-Chu, TW;

Shin-Puu Jeng, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 24/19 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01); H01L 2924/14 (2013.01);
Abstract

Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes an integrated circuit die, an encapsulant at least laterally encapsulating the integrated circuit die, a redistribution structure on the integrated circuit die and the encapsulant, a connector support metallization coupled to the redistribution structure, and an external connector on the connector support metallization. The redistribution structure includes a dielectric layer disposed distally from the encapsulant and the integrated circuit die. The connector support metallization has a first portion on a surface of the dielectric layer and has a second portion extending in an opening through the dielectric layer. The first portion of the connector support metallization has a sloped sidewall extending in a direction away from the surface of the dielectric layer.


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