The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Feb. 16, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chin-Yu Ku, Hsinchu, TW;

Sheng-Pin Yang, Kaohsiung, TW;

Chen-Shien Chen, Hsinchu County, TW;

Hon-Lin Huang, Hsinchu, TW;

Chien-Chih Chou, New Taipei, TW;

Ting-Li Yang, Tainan, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 21/76802 (2013.01); H01L 28/10 (2013.01); H01L 23/53238 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05572 (2013.01);
Abstract

A semiconductor device includes: a first conductive line disposed on a substrate, a second conductive line disposed on the substrate, and the second conductive line separated with the first conductive line by a trench; an insulating layer disposed on the first conductive line and the second conductive line, and filled the trench between the first conductive line and the second conductive line; and a magnetic film having a first surface and a second surface opposite to the first surface, and the first surface disposed on the insulating layer; wherein the first surface has a first concave directly above the trench, and the first concave has a first obtuse angle of at least 170 degree.


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