The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

May. 25, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Ching-Kai Shen, Hsinchu County, TW;

Wen-Chuan Tai, Hsinchu, TW;

Chia-Ming Hung, Taipei, TW;

Hsiang-Fu Chen, Hsinchu County, TW;

Jung-Huei Peng, Hsinchu Hsien, TW;

Chun-Wen Cheng, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 7/02 (2006.01); B81B 7/00 (2006.01); H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 21/50 (2006.01);
U.S. Cl.
CPC ...
B81B 7/02 (2013.01); B81B 7/0006 (2013.01); B81B 7/0009 (2013.01); H01L 21/44 (2013.01); H01L 21/48 (2013.01); H01L 21/50 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/033 (2013.01); B81B 2203/04 (2013.01); B81B 2203/05 (2013.01);
Abstract

The present disclosure provides a semiconductor device, which includes a first substrate comprising an upper surface and a second substrate disposed over the first substrate. The semiconductor device also includes a first electrode disposed in the second substrate and configured to move in a direction substantially parallel to the upper surface in response to a pressure difference, and a second electrode disposed in the second substrate. The second electrode is configured to provide a capacitance in conjunction with the first electrode.


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