The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Nov. 21, 2016
Applicants:

Shinko Electric Industries Co., Ltd., Nagano-shi, Nagano, JP;

Japan Electronic Materials Corporation, Amagasaki-shi, Hyogo, JP;

Inventors:

Yuichiro Shimizu, Nagano, JP;

Kosuke Fujihara, Nagano, JP;

Tomoo Yamasaki, Nagano, JP;

Chikaomi Mori, Amagasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/20 (2006.01); G01R 1/073 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
G01R 1/07371 (2013.01); G01R 31/2601 (2013.01);
Abstract

A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.


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