The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Nov. 22, 2017
Globalfoundries Inc., Grand Cayman, KY;
Julien Frougier, Albany, NY (US);
Ruilong Xie, Schenectady, NY (US);
Steven Bentley, Menands, NY (US);
Puneet H. Suvarna, Menands, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Integrated circuit structures include isolation elements extending into a substrate, and source/drain regions of a first transistor contacting the isolation elements. The isolation elements extend from the substrate to the source/drain regions of the first transistor. Isolation layers contact the source/drain regions of the first transistor, and source/drain regions of a second transistor also contact the isolation layers. Thus, the isolation layers are between the source/drain regions of the first transistor and the source/drain regions of the second transistor. Channel regions of the first transistor contact and extend between the source/drain regions of the first transistor, and channel regions of the second transistor contact and extend between the source/drain regions of the second transistor. A gate conductor surrounds sides of the channel region of the first transistor and the channel region of the second transistor.