The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Sep. 15, 2016
Applicant:

Tel Epion Inc., Billerica, MA (US);

Inventors:

Soo Doo Chae, Guilderland, NY (US);

Noel Russell, Waterford, NY (US);

Joshua LaRose, Gansevoort, NY (US);

Nicholas Joy, Ballston Lake, NY (US);

Luis Fernandez, Somerville, MA (US);

Allen J. Leith, Brookline, NH (US);

Steven P. Caliendo, Ashby, MA (US);

Yan Shao, Andover, MA (US);

Vincent Lagana-Gizzo, East Greenbush, NY (US);

Assignee:

TEL Epion Inc., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/66 (2006.01); G05B 19/406 (2006.01); H01L 21/265 (2006.01); H01L 21/263 (2006.01); H01J 37/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02678 (2013.01); G05B 19/406 (2013.01); H01J 37/304 (2013.01); H01L 21/02675 (2013.01); H01L 21/263 (2013.01); H01L 21/26566 (2013.01); H01L 22/20 (2013.01); G05B 2219/40624 (2013.01); G05B 2219/45031 (2013.01); H01J 2237/30483 (2013.01); H01J 2237/31 (2013.01); H01L 22/12 (2013.01);
Abstract

A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.


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