The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Aug. 24, 2016
Qualcomm Incorporated, San Diego, CA (US);
Lixin Ge, San Diego, CA (US);
Periannan Chidambaram, San Diego, CA (US);
Bin Yang, San Diego, CA (US);
Jiefeng Jeff Lin, San Diego, CA (US);
Giridhar Nallapati, San Diego, CA (US);
Bo Yu, San Diego, CA (US);
Jie Deng, San Diego, CA (US);
Jun Yuan, San Diego, CA (US);
Stanley Seungchul Song, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.