The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Mar. 08, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Praket P. Jha, San Jose, CA (US);
Allen Ko, Fremont, CA (US);
Xinhai Han, Santa Clara, CA (US);
Thomas Jongwan Kwon, Dublin, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Byung Ho Kil, Gangdong-gu, KR;
Ryeun Kim, Wonju-Si, KR;
Sang Hyuk Kim, Gyeonggi, KR;
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A method for forming a high aspect ratio feature is disclosed. The method includes depositing one or more silicon oxide/silicon nitride containing stacks on a substrate by depositing a first film layer on the substrate from a first plasma and depositing a second film layer having a refractive index on the first film layer from a second plasma. A predetermined number of first film layers and second film layers are deposited on the substrate. The first film layer and the second film layer are either a silicon oxide layer or a silicon nitride layer and the first film layer is different from the second film layer. The method further includes depositing a third film layer from a third plasma and depositing a fourth film layer on the third film layer from a fourth plasma. The fourth film layer has a refractive index greater than the first refractive index.