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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10243060 B1

PDFFull Text
Date of Patent:
Mar. 26, 2019

Filed:

Mar. 24, 2017

Uniform low-k inner spacer module in gate-all-around (gaa) transistors

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Robin H. Chao, Wappingers Falls, NY (US);

ChoongHyun Lee, Rensselaer, NY (US);

Chun W. Yeung, Niskayuna, NY (US);

Jingyun Zhang, Albany, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Calvin Y Choi

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66553 (2013.01); H01L 21/0214 (2013.01); H01L 21/02247 (2013.01); H01L 21/02255 (2013.01); H01L 21/02332 (2013.01); H01L 21/3065 (2013.01); H01L 29/0653 (2013.01); H01L 29/0665 (2013.01); H01L 29/6653 (2013.01); H01L 29/6681 (2013.01); H01L 29/66818 (2013.01); H01L 29/7853 (2013.01);
Abstract

Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having uniform low-k inner spacers. A nanosheet stack is formed opposite a major surface of a substrate. The nanosheet stack includes multiple nanosheets. Cavities are formed between adjacent ones of the multiple nanosheets. The cavities are filled with an oxide material and portions of the oxide material are nitridized to form inner spacers positioned between the adjacent ones of the multiple nanosheets.

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