The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Aug. 22, 2017
International Business Machines Corporation, Armonk, NY (US);
Griselda Bonilla, Hopewell Junction, NY (US);
Elbert Huang, Carmel, NY (US);
Son Nguyen, Schenectady, NY (US);
Takeshi Nogami, Schenectady, NY (US);
Christopher J. Penny, Saratoga Springs, NY (US);
Deepika Priyadarshini, Guilderland, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Embodiments are directed to a method of forming a semiconductor device and resulting structures having an air spacer between a gate and a contact by forming a gate on a substrate and over a channel region of a semiconductor fin. A contact is formed on a doped region of the substrate such that a space between the contact and the gate defines a trench. A first dielectric layer is formed over the gate and the contact such that the first dielectric layer partially fills the trench. A second dielectric layer is formed over the first dielectric layer such that an air spacer forms in the trench between the gate and the contact.