The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Jun. 23, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Joydeep Guha, Fremont, CA (US);

Sirish K. Reddy, Hillsboro, OR (US);

Kaushik Chattopadhyay, San Jose, CA (US);

Thomas W. Mountsier, San Jose, CA (US);

Aaron Eppler, Fremont, CA (US);

Thorsten Lill, Santa Clara, CA (US);

Vahid Vahedi, Oakland, CA (US);

Harmeet Singh, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/32139 (2013.01); H01L 21/76802 (2013.01);
Abstract

A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask is formed over the stack. The hardmask is patterned. The OMOM stack is etched through the hardmask.


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