High temperature atomic layer deposition of silicon oxide thin films

Abstract

Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500° C. is disclosed. Silicon precursors used have a formula of:RRSi(NRR)X  I.wherein R, R, and Rare each independently selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group; Ris selected from, a linear or branched Cto Calkyl group, and a Cto Caryl group, a Cto Calkylsilyl group; wherein Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; andRRSi(OR)(OR)X  II.wherein Rand Rare each independently selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group; Rand Rare each independently selected from a linear or branched Cto Calkyl group, and a Cto Caryl group; wherein Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure; X is a halide atom selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; q is 0 to 2; p is 0 to 2; and m+n+q+p=3.