The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Dec. 21, 2017
Spin Transfer Technologies, Inc., Fremont, CA (US);
Kuk-Hwan Kim, San Jose, CA (US);
Peter Cuevas, Los Gatos, CA (US);
Benjamin Louie, Fremont, CA (US);
Amitay Levi, Cupertino, CA (US);
SPIN MEMORY, INC., Fremont, CA (US);
Abstract
A processor-implemented method, according to one embodiment, includes: activating a subset of a plurality of p-MTJ cells oriented in one or more columns of a MRAM array. Activating the subset of p-MTJ cells includes: applying a first voltage to a gate terminal of the transistor in each of the p-MTJ cells in parallel, applying a second voltage to a first end of the MTJ sensor in each of the p-MTJ cells in parallel, and applying a third voltage to a drain terminal of the transistor in each of the p-MTJ cells in parallel. The processor-implemented method also includes: monitoring the activated subset of p-MTJ cells, determining whether any of the activated p-MTJ cells have failed, and in response to determining that an activated p-MTJ cell has failed, physically locating the failed p-MTJ cell. Other systems, methods, and computer program products are described in additional embodiments.