The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Jul. 05, 2011
Terutaka Nanri, Hitachinaka, JP;
Tsuyoshi Onishi, Hitachinaka, JP;
Satoshi Tomimatsu, Hitachinaka, JP;
Terutaka Nanri, Hitachinaka, JP;
Tsuyoshi Onishi, Hitachinaka, JP;
Satoshi Tomimatsu, Hitachinaka, JP;
HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;
Abstract
Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit () which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit () which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector () which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.