The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Sep. 29, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Purval Shyam Sule, Folsom, CA (US);

Aliasgar S. Madraswala, Folsom, CA (US);

Shantanu R. Rajwade, Sunnyvale, CA (US);

Trupti Ramkrishna Bemalkhedkar, Folsom, CA (US);

Leonard Aaron Turcios, Folsom, CA (US);

Kristopher H. Gaewsky, El Dorado Hills, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/12 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 16/0483 (2013.01); G11C 16/3459 (2013.01);
Abstract

In one embodiment, an apparatus comprises a memory comprising a first group of memory cells, a second group of memory cells, and a controller to program one or more lower pages of data to the first group of memory cells; store dynamic start voltage information, the dynamic start voltage information indicative of a rate of programming of at least a portion of the first group of memory cells; determine a start program voltage based on the dynamic start voltage information; and apply the start program voltage to the second group of memory cells during a first program pass of a program operation, the program operation to program one or more lower pages of data to the second group of memory cells.


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