The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Sep. 23, 2016
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Tetsuo Kawanabe, Tokyo, JP;

Takumi Tandou, Tokyo, JP;

Tsutomu Tetsuka, Tokyo, JP;

Naoki Yasui, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01); C23C 16/452 (2006.01); C23C 16/458 (2006.01); C23C 16/517 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32348 (2013.01); C23C 16/452 (2013.01); C23C 16/4585 (2013.01); C23C 16/517 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32165 (2013.01); H01J 37/32192 (2013.01); H01J 37/32458 (2013.01); H01J 37/32532 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01J 37/32715 (2013.01); H01L 21/68735 (2013.01);
Abstract

A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.


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