The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Jan. 16, 2018
Applicant:

Bridge Semiconductor Corp., Taipei, TW;

Inventors:

Charles W. C. Lin, Taipei, TW;

Chia-Chung Wang, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 23/13 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4857 (2013.01); H01L 21/481 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 23/13 (2013.01); H01L 23/367 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 24/85 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/105 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/92247 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1076 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/15153 (2013.01);
Abstract

The wiring substrate includes a cavity and a plurality of metal leads disposed around the cavity. The metal leads are bonded with a resin compound and electrically connected to a buildup circuitry or a re-distribution layer under the cavity. The bottom of the cavity is covered by a dielectric layer of the buildup circuitry or the resin compound, and an aperture is formed through the dielectric layer of the buildup circuitry or the resin compound to be communicated with the cavity. As a result, a semiconductor device can be face-down disposed in the cavity and electrically connected to the buildup circuitry or the re-distribution layer by bonding wires extending through the aperture.


Find Patent Forward Citations

Loading…