The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Sep. 17, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Wei Chia, Kaohsiung, TW;
Chun-Hao Chou, Tainan, TW;
Kai-Chun Hsu, New Taipei, TW;
Kuo-Cheng Lee, Tainan, TW;
Shyh-Fann Ting, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of fabricating polysilicon gate structure in an image sensor device includes depositing a gate dielectric layer on a surface of a substrate. Then a polysilicon layer is deposited over the gate dielectric layer. Next, a protection film is deposited over the polysilicon layer. A hard mask is formed over the protection film, and the polysilicon gate structure is patterned. Following that, the hard mask is stripped off. The protection film exhibits etching selectivity against the polysilicon layer and has a thickness of between 40 and 60 angstroms. The hard mask is removed by phosphoric acid solution wet etching process.