The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Aug. 31, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Long-Yi Chen, Changhua County, TW;
Jia-Hong Chu, Hsinchu, TW;
Hsin-Chin Lin, Yunlin County, TW;
Hsiang-Yu Su, New Taipei, TW;
Yun-Heng Tseng, Hsinchu County, TW;
Kai-Hsiung Chen, New Taipei, TW;
Yu-Ching Wang, Tainan, TW;
Po-Chung Cheng, Zhongpu Township, Chiayi County, TW;
Kuei-Shun Chen, Hsinchu, TW;
Chi-Kang CHang, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A metrology target of a semiconductor device is provided. The metrology target includes a substrate including first and second layers. The first layer includes a first grating, a second grating, and a first dummy structure. The first dummy structure is at least formed between the first grating and the second grating. The second layer is formed over the first layer and includes a third grating and a fourth grating. The first, second, third and fourth gratings are formed based on the first spatial period. The third grating and fourth grating are placed to overlap the first grating and second grating, respectively. The first grating and the third grating are formed with a first positional offset which is along a first direction. The second grating and the fourth grating are formed with a second positional offset which is along a second direction which is opposite to the first direction.