The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Sep. 07, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Susumu Yamauchi, Yamanashi, JP;

Jun Lin, Yamanashi, JP;

Kazuaki Nishimura, Yamanashi, JP;

Toshio Hasegawa, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C23C 16/045 (2013.01); C23C 16/18 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/32135 (2013.01); H01L 21/67069 (2013.01); H01L 21/67196 (2013.01);
Abstract

In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ALD method or a CVD method using an organic metal compound gas. The cobalt film is partially etched by supplying an etching gas containing β-diketone gas and NO gas to the target substrate. Then, the recess is further filled by forming a cobalt film on the target substrate by the ALD method or the CVD method using an organic metal compound gas.


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