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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10192888 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Apr. 17, 2017

Metallized junction finfet structures

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Bruce B. Doris, Slingerlands, NY (US);

Pranita Kerber, Mount Kisco, NY (US);

Alexander Reznicek, Troy, NY (US);

Joshua M. Rubin, Albany, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Daniel P. Morris

Otterstedt, Ellenbogen & Kammer, LLP

Primary Examiner:

Su C Kim

Assistant Examiner:

David S Wilbert

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 21/84 (2006.01); H01L 21/285 (2006.01); H01L 21/324 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/02532 (2013.01); H01L 21/283 (2013.01); H01L 21/28518 (2013.01); H01L 21/324 (2013.01); H01L 21/845 (2013.01); H01L 23/485 (2013.01); H01L 29/045 (2013.01); H01L 29/0653 (2013.01); H01L 29/0688 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/456 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01);
Abstract

FinFET devices are provided wherein the current path is minimized and mostly limited to spacer regions before the channel carriers reach the metal contacts. The fins in the source/drain regions are metallized to increase the contact area and reduce contact resistance. Selective removal of semiconductor fins in the source/drain regions following source/drain epitaxy facilitates replacement thereof by the metallized fins. A spacer formed subsequent to source/drain epitaxy prevents the etching of extension/channel regions during semiconductor fin removal.

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