The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jun. 20, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Minoru Honda, Yamanashi, JP;
Toshio Nakanishi, Yamanashi, JP;
Masashi Imanaka, Yamanashi, JP;
Cheonsoo Han, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/511 (2006.01); C23C 16/34 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/511 (2013.01); C23C 16/345 (2013.01); H01J 37/3222 (2013.01); H01J 37/3244 (2013.01); H01J 37/32467 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01J 2237/3321 (2013.01);
Abstract
Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas into the chamber together with the film-forming gas to generate plasma containing the helium gas in the chamber.