The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2019

Filed:

Jun. 08, 2010
Applicants:

Deyan Wang, Hudson, MA (US);

George G. Barclay, Jefferson, MA (US);

Thomas A. Estelle, Northborough, MA (US);

Kenneth J. Spizuoco, Framingham, MA (US);

Doris Kang, Shrewsbury, MA (US);

Inventors:

Deyan Wang, Hudson, MA (US);

George G. Barclay, Jefferson, MA (US);

Thomas A. Estelle, Northborough, MA (US);

Kenneth J. Spizuoco, Framingham, MA (US);

Doris Kang, Shrewsbury, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/38 (2006.01); H01L 21/027 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01); G03F 7/0392 (2013.01); G03F 7/11 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); H01L 21/0274 (2013.01);
Abstract

New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.


Find Patent Forward Citations

Loading…