The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Sep. 11, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Che-Cheng Chang, New Taipei, TW;
Yi-Ren Chen, Guishan Township, TW;
Chang-Yin Chen, Taipei, TW;
Yi-Jen Chen, Hsin-Chu, TW;
Ming Zhu, Singapore, SG;
Yung-Jung Chang, Cyonglin Township, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device may include: a high-k layer disposed on a substrate and over a channel region in the substrate. The high-k layer may include a high-k dielectric material having one or more impurities therein, and the one or more impurities may include at least one of C, Cl, or N. The one or more impurities may have a molecular concentration of less than about 50%. The device may further include a cap layer over the high-k layer over the channel region, the high-k layer separating the cap layer and the substrate.