The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Feb. 15, 2013
Applicant:

Entegris, Inc., Danbury, CT (US);

Inventors:

Jun Liu, Brookfield, CT (US);

Jeffrey A. Barnes, Bethlehem, CT (US);

Emanuel I. Cooper, Scarsdale, NY (US);

Laisheng Sun, Danbury, CT (US);

Elizabeth Thomas, Danbury, CT (US);

Jason Chang, Danbury, CT (US);

Assignee:

Entegris, Inc., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C11D 1/72 (2006.01); C11D 3/20 (2006.01); C11D 1/66 (2006.01); C11D 1/22 (2006.01); C11D 1/38 (2006.01); B08B 3/08 (2006.01); C11D 11/00 (2006.01); C11D 3/39 (2006.01); C11D 7/06 (2006.01); C11D 3/04 (2006.01); C11D 3/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02074 (2013.01); B08B 3/08 (2013.01); C11D 1/22 (2013.01); C11D 1/38 (2013.01); C11D 1/66 (2013.01); C11D 1/72 (2013.01); C11D 3/044 (2013.01); C11D 3/2041 (2013.01); C11D 3/2068 (2013.01); C11D 3/2075 (2013.01); C11D 3/2079 (2013.01); C11D 3/2082 (2013.01); C11D 3/3409 (2013.01); C11D 3/39 (2013.01); C11D 3/3942 (2013.01); C11D 7/06 (2013.01); C11D 11/0047 (2013.01);
Abstract

An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.


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