The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jun. 22, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsin-Che Chiang, Taipei, TW;
Ju-Yuan Tzeng, New Taipei, TW;
Chun-Sheng Liang, Changhua County, TW;
Shu-Hui Wang, Hsinchu, TW;
Chih-Yang Yeh, Hsinchu County, TW;
Jeng-Ya David Yeh, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
In a method for manufacturing a semiconductor device, a first raised structure is formed on a surface of a substrate. The first raised structure includes a top surface and a side surface adjoining the top surface. The side surface includes an upper portion, a middle portion, and a lower portion. A deposition operation is performed with a precursor to form a first film on the top surface, the upper portion and the lower portion of the side surface, and the surface of the substrate. Performing the deposition operation includes controlling a saturated vapor pressure of the precursor. A re-deposition operation is performed on the first film and the first raised structure, so as to form a film structure. A thickness of the film structure on the middle portion of the side surface is smaller than a thickness of the film structure on the top surface.