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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10164047 B1

PDFFull Text
Date of Patent:
Dec. 25, 2018

Filed:

Feb. 27, 2017

High electron mobility transistor structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chen-Ju Yu, Yilan County, TW;

Chih-Wen Hsiung, Hsinchu, TW;

Fu-Wei Yao, Hsinchu, TW;

Chun-Wei Hsu, Taichung, TW;

King-Yuen Wong, Tuen Mun, HK;

Jiun-Lei Jerry Yu, Hsinchu County, TW;

Fu-Chih Yang, Kaohsiung County, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Joseph C Nicely

Assistant Examiner:

Thai T Vuong

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 21/225 (2006.01); H01L 21/3065 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/324 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0254 (2013.01); H01L 21/2258 (2013.01); H01L 21/3065 (2013.01); H01L 21/321 (2013.01); H01L 21/324 (2013.01); H01L 21/32051 (2013.01); H01L 21/32133 (2013.01); H01L 29/0653 (2013.01); H01L 29/0843 (2013.01); H01L 29/1029 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/42316 (2013.01); H01L 29/66431 (2013.01); H01L 29/7787 (2013.01);
Abstract

A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided.

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