The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Oct. 14, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Horng Chang, Taipei, TW;

Tin-Hao Kuo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/48 (2010.01); H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5386 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/566 (2013.01); H01L 21/6835 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5389 (2013.01); H01L 24/04 (2013.01); H01L 24/19 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68372 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/18 (2013.01);
Abstract

Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive feature and a protection layer surrounding the semiconductor die. The chip package also includes a dielectric layer arranged over the semiconductor die and the protection layer and partially covering the conductive feature. The conductive feature is arranged accessibly from the protection layer and the dielectric layer. The chip package further includes a conductive layer penetrating through the dielectric layer and electrically connected to the conductive feature of the semiconductor die. The conductive feature has a first portion covered by the dielectric layer and a second portion accessibly exposed from the dielectric layer, and the second portion has a surface roughness greater than that of the first portion.


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