The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

May. 11, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chao-Chun Wang, Hsinchu, TW;

Su-Jen Sung, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/76835 (2013.01); H01L 21/76849 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present disclosure relates to an integrated chip having a back-end-of-the-line (BEOL) metal interconnect structure with capping layers that provide for improved reliability. In some embodiments, the integrated chip has a dielectric layer disposed over a semiconductor substrate, and one or more metal layer structures disposed within the dielectric layer. A first capping layer is located over the dielectric layer at positions between the one or more metal layer structures, so that the first capping layer is located along an interface having the one or more metal layer structures interspersed between the first capping layer. A second capping layer is located over the one or more metal layer structures. An etch stop layer is arranged over the first capping layer and the second capping layer and laterally surrounds the second capping layer.


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