The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Sep. 07, 2011
Applicants:

Ohhan Kim, Kyonggi-do, KR;

Wonjun Ko, Kyungki-Do, KR;

Daesik Choi, Seoul, KR;

Inventors:

OhHan Kim, Kyonggi-do, KR;

WonJun Ko, Kyungki-Do, KR;

DaeSik Choi, Seoul, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/14 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 23/552 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01); H01L 23/13 (2006.01); H01L 23/367 (2006.01); H01L 23/36 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/147 (2013.01); H01L 21/561 (2013.01); H01L 23/13 (2013.01); H01L 23/3128 (2013.01); H01L 23/36 (2013.01); H01L 23/3677 (2013.01); H01L 23/49575 (2013.01); H01L 23/49827 (2013.01); H01L 23/552 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 23/49816 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/293 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29186 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81411 (2013.01); H01L 2224/81424 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81455 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/92225 (2013.01); H01L 2224/92247 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06575 (2013.01); H01L 2225/06589 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has openings around a center portion of the planar heat spreader and aligned over the peripheral portion of the substrate. A second semiconductor die is mounted over the center portion of the planar heat spreader. A third semiconductor die is mounted over the second semiconductor die. First and second pluralities of bond wires extend from the second and third semiconductor die, respectively, through the openings in the planar heat spreader to electrically connect to the through conductive vias. An encapsulant is deposited over the substrate and around the planar heat spreader.


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