The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
May. 07, 2014
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Ching-Fu Yeh, Hsinchu, TW;
Ming-Han Lee, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor comprises: providing a substrate; forming an opening in a dielectric layer disposed over the substrate; providing a target with a first type atoms; ionizing the first type atoms provided from the target; providing a bias to the substrate for controlling the moving paths of the ionized first type atoms thereby directing the ionized first type atoms in the opening; and forming a first conductive structure from bottom of the opening with the ionized first type atoms under a pre-determined frequency and a pre-determined pressure.