The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Jan. 29, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ying-Chieh Hung, Hsinchu, TW;

Ming-Hua Yu, Hsinchu, TW;

Yi-Hung Lin, Taipei, TW;

Jet-Rung Chang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/02 (2006.01); H01L 21/67 (2006.01); G01B 11/06 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67253 (2013.01); G01B 11/0625 (2013.01); H01L 21/02694 (2013.01); H01L 21/265 (2013.01); H01L 21/324 (2013.01); H01L 22/12 (2013.01);
Abstract

A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.


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