The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
May. 09, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chen-Ming Lee, Yangmei, TW;
Liang-Yi Chen, Taipei, TW;
Fu-Kai Yang, Hsinchu, TW;
Mei-Yun Wang, Chu-Pei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device is provided, including forming a plurality of fins on a semiconductor substrate, and forming source/drain regions on the fins. The source/drain regions have an uneven surface with a mean surface roughness, R, of about 10 nm to about 50 nm. A smoothing layer is formed on the source/drain regions filling the uneven surface. An etch stop layer is formed overlying the smoothing layer. A portion of the etch stop layer is removed to expose a portion of the smoothing layer. The exposed smoothing layer is removed, and a contact layer is formed on the source/drain regions.