The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Feb. 01, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian, CN;
Kai-Ping Chen, Tainan, TW;
Kuei-Hsuan Yu, New Taipei, TW;
Chiu-Hsien Yeh, Tainan, TW;
Li-Wei Feng, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
A method for forming patterns of semiconductor device is provided in the present invention, with steps of filling up first self-assembly material in first openings in a dielectric layer, phase-separating the first self-assembly material to form a first portion and a second portion surrounding the first portion, removing the first portion and performing a first etch process to form a first mask pattern in a mask layer, forming a second dielectric layer and repeating the above steps to form a second mask pattern in the mask layer, wherein the second mask pattern is aligned with the first mask pattern to form a common mask pattern.