The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Apr. 26, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Jen Tseng, Hsinchu, TW;

Yen-Liang Lin, Taichung, TW;

Tin-Hao Kuo, Hsinchu, TW;

Chen-Shien Chen, Zhubei, TW;

Mirng-Ji Lii, Sinpu Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 23/498 (2006.01); H01L 23/488 (2006.01); H01L 21/44 (2006.01); H01L 21/47 (2006.01); H01L 21/283 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 25/065 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/15 (2013.01); H01L 21/0273 (2013.01); H01L 21/02118 (2013.01); H01L 21/283 (2013.01); H01L 21/44 (2013.01); H01L 21/47 (2013.01); H01L 23/3142 (2013.01); H01L 23/488 (2013.01); H01L 23/49816 (2013.01); H01L 23/5283 (2013.01); H01L 24/03 (2013.01); H01L 24/10 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 21/563 (2013.01); H01L 23/3192 (2013.01); H01L 2224/02333 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/11472 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13012 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13015 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13565 (2013.01); H01L 2224/13686 (2013.01); H01L 2224/16058 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/8182 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/81345 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3841 (2013.01);
Abstract

Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. A method of forming a device includes forming a conductive trace over a first substrate, the conductive trace having first tapering sidewalls, forming a conductive bump over a second substrate, the conductive bump having second tapering sidewalls and a first surface distal the second substrate, and attaching the conductive bump to the conductive trace via a solder region. The solder region extends from the first surface of the conductive bump to the first substrate, and covers the first tapering sidewalls of the conductive trace. The second tapering sidewalls of the conductive bump are free of the solder region.


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