The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Feb. 15, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/4408 (2013.01); C23C 16/45527 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/02617 (2013.01);
Abstract
According to one example, a process includes performing a first plurality of layer deposition cycles of a deposition process on a substrate, and after performing the first plurality of layer deposition cycles, performing a plasma enhanced layer deposition cycle comprising a plasma treatment process. The first plurality of layer deposition cycles are performed without a plasma treatment process.