The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Sep. 05, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Tadashi Aoto, Miyagi, JP;
Daisuke Hayashi, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32715 (2013.01); H01J 37/32091 (2013.01); H01L 21/6831 (2013.01); H01L 21/68757 (2013.01); H01J 37/32807 (2013.01); H01L 21/67103 (2013.01);
Abstract
Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.