The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Dec. 07, 2015
Applicant:
Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Inventors:
Jeong Hwan Jeong, Uiwang-si, KR;
Young Chul Jung, Uiwang-si, KR;
Dong Hun Kang, Uiwang-si, KR;
Tae Wan Kim, Uiwang-si, KR;
Jong Il Noh, Uiwang-si, KR;
Chang Ki Hong, Uiwang-si, KR;
Assignee:
SAMSUNG SDI CO., LTD., Yongin-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); B24B 37/04 (2012.01); C09K 3/14 (2006.01); C23F 3/04 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 37/044 (2013.01); C09K 3/1409 (2013.01); C09K 3/1436 (2013.01); C09K 3/1463 (2013.01); C23F 3/04 (2013.01); H01L 21/3212 (2013.01);
Abstract
Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.