The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Sep. 19, 2016
Applicant:

Air Products and Chemicals, Inc., Allentown, PA (US);

Inventors:

Matthias Stender, Phoenix, AZ (US);

Maitland Gary Graham, Tempe, AZ (US);

Assignee:

VERSUM MATERIALS US, LLC, Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/04 (2006.01); C09K 3/14 (2006.01); H01L 21/768 (2006.01); C09G 1/02 (2006.01); H01L 21/321 (2006.01); H01L 21/3105 (2006.01); C08K 3/22 (2006.01); C08K 3/36 (2006.01);
U.S. Cl.
CPC ...
C09G 1/04 (2013.01); C09G 1/02 (2013.01); C09K 3/1463 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76819 (2013.01); C08K 3/22 (2013.01); C08K 3/36 (2013.01); C08K 2003/2237 (2013.01); C08K 2003/2241 (2013.01); C08K 2003/2244 (2013.01);
Abstract

Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.


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