The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Jul. 10, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Min-Feng Kao, Chiayi, TW;

Dun-Nian Yaung, Taipei, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Tzu-Hsuan Hsu, Kaohsiung, TW;

Szu-Ying Chen, Toufen Township, TW;

Wei-Cheng Hsu, Kaohsiung, TW;

Hsiao-Hui Tseng, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 27/146 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 31/18 (2013.01);
Abstract

A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.


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