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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10134626 B1

PDFFull Text
Date of Patent:
Nov. 20, 2018

Filed:

Dec. 11, 2017

Mechanisms for forming finfets with different fin heights

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tsung-Yu Chiang, New Taipei, TW;

Chung-Wei Lin, Toufen Township, TW;

Kuang-Hsin Chen, Jung-Li, TW;

Bor-Zen Tien, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-chu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Phuc Dang

Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/762 (2006.01); H01L 21/263 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/266 (2013.01); H01L 21/2636 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a doped isolation structure formed above a substrate, and the doped isolation structure includes a first doped portion and a second doped portion, and a doped concentration of the second doped portion is different from a doped concentration of the first doped portion. The semiconductor device also includes a first fin partially embedded in the doped isolation structure, and a sidewall surface of the first fin is in direct contact with the first doped portion. The semiconductor device includes a second fin partially embedded in the doped isolation structure, and the doped isolation structure is between the first fin and the second fin, and a sidewall surface of the second fin is in direct contact with the second doped portion.

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