The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Sep. 24, 2015
Applicant:

Tanaka Kikinzoku Kogyo K.k., Chiyoda-ku, Tokyo, JP;

Inventors:

Ryosuke Harada, Tsukuba, JP;

Toshiyuki Shigetomi, Tsukuba, JP;

Kazuharu Suzuki, Tsukuba, JP;

Shunichi Nabeya, Tsukuba, JP;

Takayuki Sone, Tsukuba, JP;

Akiko Kumakura, Tsukuba, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/18 (2006.01); C07F 15/00 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); C07F 17/02 (2006.01); C09D 1/00 (2006.01);
U.S. Cl.
CPC ...
C23C 16/18 (2013.01); C07F 15/00 (2013.01); C07F 15/0046 (2013.01); C07F 17/02 (2013.01); C09D 1/00 (2013.01); H01L 21/28 (2013.01); H01L 21/285 (2013.01); H01L 21/28506 (2013.01);
Abstract

The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250° C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium:


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