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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10128329 B1

PDFFull Text
Date of Patent:
Nov. 13, 2018

Filed:

Aug. 22, 2016

Method of forming guard ring structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wan-Yen Lin, Kaohsiung, TW;

Wun-Jie Lin, Hsinchu, TW;

Yu-Ti Su, Tainan, TW;

Bo-Ting Chen, Fengyuan, TW;

Jen-Chou Tseng, Jhudong Township, TW;

Kuo-Ji Chen, Taipei County, TW;

Sun-Jay Chang, Hsinchu, TW;

Min-Chang Liang, Zhu-Dong Town, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Bac Au

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/76 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/761 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 21/26513 (2013.01); H01L 21/76 (2013.01); H01L 21/761 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 27/0251 (2013.01); H01L 27/0886 (2013.01); H01L 29/0646 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A method of making a circuit device includes forming core circuitry. The core circuitry includes a doped region in the core circuit. The method further includes implanting a first set of guard rings around a periphery of the core circuitry. The first set of guard rings has a first dopant type. Implanting the first set of guard rings includes implanting the first set of guard rings spaced from the doped region. The method further includes implanting a second set of guard rings having a second dopant type, wherein the second dopant type being opposite to the first dopant type. At least one guard ring of the second set of guard rings is around a periphery of at least one guard ring of the first set of guard rings.

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