The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Aug. 16, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ping-Yin Liu, Taipei, TW;

Lan-Lin Chao, Sindian, TW;

Cheng-Tai Hsiao, Tainan, TW;

Xin-Hua Huang, Xihu Township, TW;

Hsun-Chung Kuang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/40 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/89 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0219 (2013.01); H01L 2224/02181 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/0516 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05547 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06517 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80011 (2013.01); H01L 2224/80012 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80014 (2013.01); H01L 2224/8084 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80948 (2013.01); H01L 2224/8192 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06524 (2013.01); H01L 2924/01026 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/12042 (2013.01);
Abstract

A semiconductor device and a method of fabricating the same are introduced. In an embodiment, one or more passivation layers are formed over a first substrate. Recesses are formed in the passivation layers and one or more conductive pads are formed in the recesses. One or more barrier layers are formed between the passivation layers and the conductive pads. The conductive pads of the first substrate are aligned to the conductive pads of a second substrate and are bonded using a direct bonding method.


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