The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Sep. 18, 2017
Applicant:

Axcelis Technologies, Inc., Beverly, MA (US);

Inventors:

John Baggett, Amesbury, MA (US);

Joe Ferrara, Georgetown, MA (US);

Brian Terry, Amesbury, MA (US);

Assignee:

Axcelis Technologies, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G21K 5/08 (2006.01); H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01J 37/302 (2006.01); H01J 37/147 (2006.01); G01K 7/22 (2006.01); H01J 37/18 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); G01K 7/223 (2013.01); H01J 37/1471 (2013.01); H01J 37/185 (2013.01); H01J 37/3023 (2013.01); H01L 21/265 (2013.01); H01J 2237/04735 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/31701 (2013.01);
Abstract

A system and method is provided maintaining a temperature of a workpiece during an implantation of ions in an ion implantation system, where the ion implantation system is characterized with a predetermined set of parameters. A heated chuck is provided at a first temperature and heats the workpiece to the first temperature. Ions are implanted into the workpiece concurrent with the heating, and thermal energy is imparted into the workpiece by the ion implantation. A desired temperature of the workpiece is maintained within a desired accuracy during the implantation of ions by selectively heating the workpiece on the heated chuck to a second temperature. The desired temperature is maintained based, at least in part, on the characterization of the ion implantation system. Thermal energy imparted into the workpiece from the implantation is mitigated by the selective heating of the workpiece on the heated chuck at the second temperature.


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