The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Jan. 23, 2017
Applicant:

Fei Company, Hillsboro, OR (US);

Inventors:

Faysal Boughorbel, Eindhoven, NL;

Pavel Potocek, Eindhoven, NL;

Ingo Gestmann, Duisburg, DE;

Assignee:

FEI Company, Hillsboro, OR (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01); H01J 37/20 (2006.01); H01J 37/244 (2006.01); H01J 37/22 (2006.01); G01N 23/225 (2018.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); G01N 23/225 (2013.01); H01J 37/20 (2013.01); H01J 37/222 (2013.01); H01J 37/244 (2013.01); G01N 2223/079 (2013.01); G01N 2223/08 (2013.01); G01N 2223/423 (2013.01); H01J 2237/226 (2013.01);
Abstract

A method of investigating a specimen using charged-particle microscopy, and a charged particle microscope configured for same. In one embodiment, the method includes: (a) selecting a virtual sampling grid on a surface of a specimen, the virtual sampling grid extending in an XY plane and comprising nodes to be impinged upon by a beam of charged particles; (b) selecting a landing energy for the beam, the landing energy associated with a penetration depth; (c) generating a scan image by irradiating the specimen at each of the nodes with the beam, and detecting output radiation emanating from the specimen in response thereto; (d) repeating steps (b) and (c) for a series of different landing energies corresponding to an associated series of penetration depths, (e) pre-selecting an energy increment by which the landing energy is to be altered after a first iteration of steps (b) and (c); (f) associating the energy increment with a corresponding depth increment; (g) selecting the virtual sampling grid to have a substantially equal node pitch p in X and Y, which pitch p is matched to the value of the depth increment so as to produce a substantially cubic sampling voxel; and (h) selecting subsequent energy values in the series of landing energies so as to maintain a substantially constant depth increment between consecutive members of the series of penetration depths.


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