The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Nov. 13, 2014
Applicant:

Tohoku University, Sendai-shi, Miyagi, JP;

Inventors:

Shun Kanai, Sendai, JP;

Fumihiro Matsukura, Sendai, JP;

Hideo Ohno, Sendai, JP;

Michihiko Yamanouchi, Sendai, JP;

Shoji Ikeda, Sendai, JP;

Hideo Sato, Sendai, JP;

Assignee:

TOHOKU UNIVERSITY, Sendai-Shi, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/1693 (2013.01);
Abstract

A control method for a magnetoresistance effect element and a control device for the magnetoresistance effect element that provide a higher writing speed and lower power consumption. When the magnetization direction of a second magnetic layer is nearly parallel to the magnetization direction of a first magnetic layer, a first voltage is applied across the first and second magnetic layer so that the magnetization direction of the second magnetic layer is reversed by modifying the direction of the magnetization easy axis thereof, followed by the application of a second voltage. When the magnetization direction of the second magnetic layer is nearly antiparallel to the magnetization direction of the first magnetic layer, a third voltage is applied across the first magnetic layer and the second magnetic layer, followed by the application of a fourth voltage so that current flows from the second magnetic layer toward the first magnetic layer.


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