The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Mar. 27, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jian J. Chen, Fremont, CA (US);

Mohamad A. Ayoub, Los Gatos, CA (US);

Juan Carlos Rocha-Alvarez, San Carlos, CA (US);

Zheng John Ye, Milpitas, CA (US);

Ramprakash Sankarakrishnan, Santa Clara, CA (US);

Jianhua Zhou, Campbell, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/00 (2006.01); C23C 16/46 (2006.01); C23C 16/509 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/46 (2013.01); C23C 16/5096 (2013.01); H01J 37/32174 (2013.01); H01J 37/32183 (2013.01); H01J 37/32715 (2013.01); H01J 37/32724 (2013.01);
Abstract

Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.


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