The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
May. 03, 2017
Globalfoundries Inc., Grand Cayman, KY;
Yi Qi, Niskayuna, NY (US);
Jianwei Peng, Latham, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Kwan-Yong Lim, Niskayuna, NY (US);
Hui Zhan, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed includes, among other things, forming a gate around an initial fin structure and above a layer of insulating material, and performing a fin trimming process on an exposed portion of the initial fin structure in the source/drain region so as to produce a reduced-size fin portion positioned above a surface of a layer of insulating material in the source/drain region of the device, wherein the the reduced-size fin portion has a second size that is less than the first size. In this example, the method also includes forming a conformal epi semiconductor material on the reduced-size fin portion and forming a conductive source/drain contact structure that is conductively coupled to and wrapped around the conformal epi semiconductor material.