The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10121655 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 06, 2018

Filed:

Nov. 16, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Anantha K. Subramani, San Jose, CA (US);

Kaushal Gangakhedkar, San Jose, CA (US);

Abhishek Chowdhury, Bangalore, IN;

John C. Forster, Mt. View, CA (US);

Nattaworn Nuntaworanuch, Milpitas, CA (US);

Kallol Bera, Fremont, CA (US);

Philip A. Kraus, San Jose, CA (US);

Farzad Houshmand, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01L 21/0228 (2013.01); H01L 21/28556 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 21/68785 (2013.01);
Abstract

Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.


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